I-Sputtering Coating Xa amasuntswana anamandla aphezulu ebhobhoza umphezulu oqinileyo, amasuntswana kumphezulu oqinileyo anokufumana amandla kwaye abaleke umphezulu ukuze afakwe kwi-substrate.I-sputtering phenomenon yaqala ukusetyenziswa kwitekhnoloji yokwaleka ngo-1870, kwaye ngokuthe ngcembe isetyenziswe kwimveliso yemizi-mveliso emva kowe-1930 ngenxa yokunyuka kwezinga lokubekwa.Isixhobo esixhaphakileyo sokutshiza sepali ezimbini sibonisiwe kuMfanekiso 3 [umzobo weSchematic of vacuum coating coating pole sputtering].Ngokuqhelekileyo izinto eziza kufakwa zenziwe kwiplate-ithagethi, egxininiswe kwi-cathode.I-substrate ifakwe kwi-anode ejongene nendawo ekujoliswe kuyo, iisentimitha ezimbalwa ukusuka kwindawo ekujoliswe kuyo.Emva kokuba inkqubo impontshelwe kwi-vacuum ephezulu, izaliswe nge-10 ~ 1 Pa gas (ngokuqhelekileyo i-argon), kwaye i-voltage ye-volts engamawaka aliqela isetyenziswa phakathi kwe-cathode kunye ne-anode, kwaye ukukhutshwa okukhanyayo kuveliswa phakathi kwee-electrode ezimbini. .Iiyoni ezintle eziveliswa ngokukhupha zibhabha kwi-cathode phantsi kwesenzo sommandla wombane kwaye zingqubane nee-athomu kwindawo ekujoliswe kuyo.Iiathom ekujoliswe kuzo eziphuncuka kwindawo ekujoliswe kuyo ngenxa yontlitheko zibizwa ngokuba zii-athom zokutshiza, kwaye amandla azo akuluhlu lwe-1 ukuya kumashumi ee-electron volts.Iiathom eziphothiweyo zifakwe kumphezulu we-substrate ukwenza ifilimu.Ngokungafaniyo ne-evaporation coating, ukugquma kwe-sputter akukhawulelwanga yindawo yokunyibilika kwezinto zefilimu, kwaye inokutshiza izinto eziphikisayo ezifana ne-W, Ta, C, Mo, WC, TiC, njl. indlela, oko kukuthi, irhasi esebenzayo (O, N, HS, CH, njl.) yi
yongezwa kwi-Ar gas, kunye negesi esebenzayo kunye neeyoni zayo zisabela nge-athomu ekujoliswe kuyo okanye i-athomu echithekileyo ukuze yenze ikhompawundi (efana ne-oxide, i-nitrogen) Iikhompawundi, njl.) kwaye zifakwe kwi-substrate.Indlela ye-sputtering ye-high-frequency ingasetyenziselwa ukufaka ifilimu ye-insulating.I-substrate ifakwe kwi-electrode ephantsi, kwaye ithagethi ye-insulating ifakwe kwi-electrode echaseneyo.Esinye isiphelo se-high-frequency power supply sisekelwe, kwaye esinye isiphelo sixhunywe kwi-electrode exhotyiswe nge-insulating target ngokusebenzisa inethiwekhi ehambelanayo kunye ne-DC blocking capacitor.Emva kokutshintsha umbane we-high-frequency power, i-high-frequency voltage itshintsha ngokuqhubekayo i-polarity yayo.Ii-electron kunye nee-ion ezilungileyo kwi-plasma zibethe i-target target ngexesha lomjikelo wesiqingatha esilungileyo kunye nomjikelo wesiqingatha esibi sombane, ngokulandelanayo.Ekubeni ukuhamba kwe-electron kuphezulu kunee-ion ezintle, ubuso bethagethi ye-insulating ihlawuliswa kakubi.Xa ulungelelwaniso oluguquguqukayo lufikelelwe, ekujoliswe kuko kukwisakhono sokuthambekela okungalunganga, ukuze ii-ion ezikhahlazayo ziqhubeke.Ukusetyenziswa kwe-magnetron sputtering kunokunyusa izinga lokubeka ngokuphantse ukulandelelana kobukhulu xa kuthelekiswa nokutshiza kwe-non-magnetron.
Ixesha lokuposa: Jul-31-2021